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NTHD3100C
Power MOSFET
20 V, +3.9 A / ? 4.4 A,
Complementary ChipFET t
Features
AND PIN A
? Complementary N ? Channel and P ? Channel MOSFET
? Small Size, 40% Smaller than TSOP ? 6 Package
? Leadless SMD Package Provides Great Thermal Characteristics
? Trench P ? Channel for Low On Resistance
? Low Gate Charge N ? Channel for Test Switching
? Pb ? Free Packages are Available
Applications
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
http://onsemi.com
R DS(on) Typ
58 m W @ 4.5 V
77 m W @ 2.5 V
64 m W @ ? 4.5 V
85 m W @ ? 2.5 V
I D MAX
3.9 A
? 4.4 A
?
?
?
?
DC ? DC Conversion Circuits
Load Switch Applications Requiring Level Shift
Drive Small Brushless DC Motors
Ideal for Power Management Applications in Portable, Battery
Powered Products
G 1
D 1
G 2
S2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
S 1
D 2
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
N ? Ch
V DSS
V GS
20
" 12
V
V
N ? Channel MOSFET
P ? Channel MOSFET
N ? Channel
Continuous Drain
Current (Note 1)
Steady
State
P ? Ch
T A = 25 ° C
T A = 85 ° C
I D
" 8.0
2.9
2.1
A
1
8
ChipFET
CASE 1206A
STYLE 2
t ≤ 10 s
T A = 25 ° C
3.9
P ? Channel
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 3.2
? 2.3
A
PIN
MARKING
t ≤ 10 s
T A = 25 ° C
? 4.4
CONNECTIONS
DIAGRAM
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.1
W
D 1
8
1
S 1
1
8
t ≤ 5s
3.1
D 1
7
2
G 1
2
7
Pulsed Drain Current N ? Ch t = 10 m s
(Note 1)
P ? Ch t = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
12
? 13
? 55 to
150
A
° C
D 2
D 2
6
5
3
4
S 2
G 2
3
4
6
5
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 seconds)
I S
T L
2.5
260
A
° C
C9
M
G
= Specific Device Code
= Month Code
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 3
1
Publication Order Number:
NTHD3100C/D
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相关代理商/技术参数
NTHD3100F 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTHD3101F 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode
NTHD3101FT1 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT1G 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT3 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT3G 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3102C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
NTHD3102CT1G 功能描述:MOSFET 20V 5.5A/-4.2A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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